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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
A1015LT1
FEATURES Power dissipation PCM : 0.2 W Tamb=25ae(c) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J T stg: -55aeto +150
Unit : mm
TRANSISTORPNP
(c)
SOT 23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat)
unless
Test
otherwise
specified(c)
MIN -50 -50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V |I A |I A |I A
conditions
Ic= -100|I A IE=0 Ic= -0.1mAIB=0 IE= -10|I AIC=0 VCB=-50 V , IE=0 VCE= -50 V , IB=0 VEB=- 5V , IC=0
VCE=-6V, IC= -2mA IC=-100 mA, IB= -10m A IC=-100 mA, IB= -10m A VCE=-10V, I = -1mA C
fT
f=30MHz
CLASSIFICATION OF H FE(1) Rank Range MARKING
L 130- 200 BA
H 200- 400
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
|E
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100


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